Optoelectronic Semiconductor Chip and Optoelectronic Module

ABSTRACT

An optoelectronics semiconductor chip has a substrate and a semiconductor body arranged on the substrate and has a semiconductor layer sequence. The semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and is provided to generate or to receive radiation. The first semiconductor layer is electrically conductively connected to a first contact and to a second contact. The first contact is formed on a front side of the substrate, facing the semiconductor body. The second contact is formed on a rear side of the substrate, facing away from the semiconductor body. The first contact and the second contact are electrically conductively connected to each other.

This patent application is a national phase filing under section 371 ofPCT/EP2014/055835, filed Mar. 24, 2014, which claims the priority ofGerman patent application 10 2013 103 409.8, filed Apr. 5, 2013, each ofwhich is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present application relates to an optoelectronic semiconductor chipand to an optoelectronic module comprising at least one optoelectronicsemiconductor chip.

BACKGROUND

For optoelectronic modules aimed at achieving the highest possiblepacking density of light emitting diodes, it is often desired for thelight emitting diodes to be interconnected in series with one anotherdirectly via wire bonding connections. However, the arrangement oftop-side bonding pads on the light emitting diodes makes it moredifficult to provide a rectangular emission surface, which is expedientin particular for projection applications.

SUMMARY

Embodiments of the invention specify a semiconductor chip which isdistinguished by particularly universal usability in conjunction withgood optoelectronic properties. Further embodiments specify anoptoelectronic module that is producible simply and reliably.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the optoelectronic semiconductor chip comprises asemiconductor body having a semiconductor layer sequence. Thesemiconductor layer sequence comprises, in particular, an active region,which is provided for generating and/or for receiving radiation. Theactive region is provided, for example, for receiving or for generatinggradation in the ultraviolet, visible or infrared spectral range. Theactive region is arranged, for example, between a first semiconductorlayer and a second semiconductor layer. Expediently, the firstsemiconductor layer and the second semiconductor layer differ from oneanother with regard to conduction type. By way of example, the firstsemiconductor layer is n-conducting and the second semiconductor layeris p-conducting, or vice versa. In a vertical direction, that is to sayin a direction running perpendicularly to a main extension plane of thesemiconductor layers of the semiconductor layer sequence, thesemiconductor body extends in particular between a radiation passagesurface and a main surface.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the optoelectronic semiconductor chip comprises acarrier. In a vertical direction, the carrier extends between a frontside facing the semiconductor body and a rear side of the carrier facingaway from the semiconductor body. The semiconductor body is arranged,and in particular fixed, on the carrier. By way of example, thesemiconductor body is cohesively connected to the carrier.

In the case of a cohesive connection, the, preferably prefabricated,connection partners are held together by means of atomic and/ormolecular forces. A cohesive connection can be obtained, for example, bymeans of a connection means, for instance an adhesive or a solder. Ingeneral, a separation of the connection is accompanied by destruction ofthe connection means and/or of at least one of the connection partners.

By way of example, the semiconductor body is fixed to the carrier bymeans of a connecting layer, in particular an electrically conductiveconnecting layer.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the optoelectronic semiconductor chip comprises afirst contact, which is electrically conductively connected to the firstsemiconductor layer. The first contact is provided in particular for theexternal electrical connecting of the semiconductor chip, for example,by means of a connecting line, for instance a wire bonding connection.The first contact is formed, for example, on a front side of the carrierfacing the semiconductor body. In other words, the first contact isaccessible for external electrical contacting from the side of thesemiconductor chip facing away from the carrier.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the optoelectronic semiconductor chip comprises asecond contact, which is electrically conductively connected to thefirst semiconductor layer. The second contact is provided in particularfor the external electrical contacting of the optoelectronicsemiconductor chip. The second contact is formed, for example, on therear side of the carrier. In a vertical direction, therefore, thecarrier runs between the first contact and the second contact.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the first contact and the second contact areelectrically conductively connected to one another. In other words, inthe optoelectronic semiconductor chip there is a current path betweenthe first contact and the second contact. In particular, the currentpath runs between the front side and the rear side of the carrier.During the operation of the optoelectronic semiconductor chip, the firstcontact and the second contact are at the same electrical potential. Inparticular, upon application of an electrical voltage between the firstcontact and the second contact, no electric current would flow throughthe semiconductor body, in particular through the active region. Inother words, the electrically conductive connection between the firstcontact and the second contact runs completely outside the semiconductorbody or at least completely outside the active region.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the first semiconductor layer is connected to thefirst contact and the second contact.

In at least one embodiment of the optoelectronic semiconductor chip, theoptoelectronic semiconductor chip comprises a carrier and asemiconductor body having a semiconductor layer sequence, saidsemiconductor body being arranged on the carrier. The semiconductor bodycomprises an active region, which is arranged between the firstsemiconductor layer and a second semiconductor layer and is provided forgenerating and/or for receiving radiation. The first semiconductor layeris electrically conductively connected to a first contact and to asecond contact. The first contact is formed on a front side of thecarrier facing the semiconductor body. The second contact is formed on arear side of the carrier facing away from the semiconductor body. Thefirst contact and the second contact are electrically conductivelyconnected to one another.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the carrier is electrically conductive. The carriercontains, for example, a semiconductor material, for instance silicon orgermanium. In order to increase the electrical conductivity, thesemiconductor material can be doped. Alternatively, the carrier can alsocontain a metal or a metallic alloy and can furthermore be embodied in ametallic fashion. In this case, the rear side of the carrier itself canform the second contact.

In a departure therefrom, it is also conceivable for the carrier tocontain an electrically insulating material. By way of example, thecarrier can have an electrically insulating main body, through whichelectrical plated-through holes, for example, recesses filled at leastpartly with a metal, extend in a vertical direction from the front sideto the rear side. By way of example, a ceramic, for instance aluminumnitride or boron nitride, is suitable for an electrically insulatingcarrier.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the first semiconductor layer is arranged on theside of the active region facing away from the carrier. The activeregion is therefore arranged between the first semiconductor layer andthe carrier. The first semiconductor layer is electrically conductivelyconnected to the first contact in particular via a first connectionlayer. The first contact can be an area of the first connection layerthat is accessible for the axial contacting, or a contact layer formedon the first connection layer.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the semiconductor body has at least one recess whichextends through the second semiconductor layer and the active region. Inparticular, the first connection layer is connected to the firstsemiconductor layer in the recess. The first semiconductor layer iselectrically contactable from the main surface of the semiconductor bodyvia the recess. A contact area arranged on the radiation passage surfaceof the first semiconductor layer is therefore not required for theelectrical contacting of the first semiconductor layer.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the semiconductor chip comprises a counter-contact,which is electrically conductively connected to the second semiconductorlayer. The counter-contact is provided for external electricalcontacting of the optoelectronic semiconductor chip. By applying anelectrical voltage between the counter-contact and the first contact orbetween the counter-contact and the second contact, it is possible forcharge carriers to be injected into the active region and to recombinetherewith emission of radiation. In the case of an optoelectronicsemiconductor chip embodied as a radiation receiver, charge carriersgenerated in the active region can be tapped off via the counter-contactand the first contact or via the counter-contact and the second contact.

The second semiconductor layer is electrically conductively connected tothe counter-contact in particular via a second connection layer. Thecounter-contact can be an area of the second connection layer that isaccessible for the external contacting or a contact layer formed on thesecond connection layer. The counter-contact is accessible for externalcontacting in particular from the front side of the carrier. By way ofexample, the second connection layer directly adjoins the main surfaceof the semiconductor body. Furthermore, the second connection layer canbe embodied as a mirror layer for the radiation to be generated or to bereceived in the active region. By way of example, the mirror layer isembodied as a metallic mirror layer. For example, the second connectionlayer contains silver, aluminum, rhodium, palladium or gold or ametallic alloy comprising at least one of the materials mentioned.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the first contact and the counter-contact arearranged laterally with respect to the semiconductor body in a plan viewof the semiconductor chip. In other words, the semiconductor body, thefirst contact and the counter-contact do not overlap one another at anypoint. In particular, the radiation passage surface of the semiconductorbody is totally free of a contact area provided for the externalcontacting.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the first connection layer and the second connectionlayer run regionally between the semiconductor body and the carrier. Inparticular, the first connection layer can cover the carrier completelyor substantially completely, that is to say with a degree of coverage ofat least 90%, in a plan view of the semiconductor chip.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the second connection layer runs regionally betweenthe first connection layer and the semiconductor body. In a plan view ofthe semiconductor chip, therefore, the first connection layer and thesecond connection layer overlap at least regionally.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the semiconductor body has a rectangular basic shapein a plan view of the semiconductor chip. The first contact and thesecond contact are arranged alongside one another on the same side asthe semiconductor body in particular in a plan view of the semiconductorchip. In other words, the first contact and the counter-contact runalong a side surface of the semiconductor body. In a plan view of thesemiconductor chip, therefore, the semiconductor body is not situated atany point between the first contact and the counter-contact.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, the optoelectronic semiconductor chip is embodied asa thin-film semiconductor chip. In the case of a thin-film semiconductorchip, a growth substrate for the in particular epitaxial deposition ofthe semiconductor layer sequence of the semiconductor body is removedcompletely or regionally. The carrier is therefore different from thegrowth substrate and serves for mechanically stabilizing thesemiconductor layer sequence, such that the growth substrate is nolonger required for this purpose.

In accordance with at least one embodiment of the optoelectronicsemiconductor chip, a radiation conversion element is arranged on thesemiconductor body. The radiation conversion element is provided inparticular for converting primary radiation having a first peakwavelength that is generated in the semiconductor chip into secondaryradiation having a second peak wavelength, which is different from thefirst peak wavelength. By way of example, the radiation conversionelement is a prefabricated plate fixed to the semiconductor chip.Alternatively, the radiation conversion element can also be formeddirectly on the semiconductor chip, for example, in the form of amolding compound applied on the semiconductor chip. By virtue of therectangular basic shape of the radiation passage surface, a radiationconversion element having a rectangular basic shape can furthermore beemployed. Such a radiation conversion element is producible particularlysimply.

In accordance with at least one embodiment, an optoelectronic modulecomprises an optoelectronic semiconductor chip arranged on a modulecarrier. The semiconductor chip has, in particular, at least one of theabovementioned features of the optoelectronic semiconductor chip.

In accordance with at least one embodiment of the module, the modulecomprises a first semiconductor chip and a second semiconductor chip,wherein the first semiconductor chip and the second semiconductor chipare electrically interconnected in series with one another. By way ofexample, a first contact of the first semiconductor chip and acounter-contact of the second semiconductor chip are electricallyconductively connected to one another via a connecting line. In thiscase, the second contact of the semiconductor chips is not required forelectrical contacting of the semiconductor chips.

In accordance with at least one embodiment of the module, the modulecarrier is embodied in an electrically insulating fashion. By way ofexample, a ceramic, for instance aluminum nitride or boron nitride, issuitable for the module carrier. Alternatively, the module carrier canalso have an electrically conductive main body, which is provided withan electrically insulating coating on the side facing the semiconductorchips.

In accordance with at least one embodiment of the module, the modulecarrier is electrically conductive and a second contact of at least onesemiconductor chip of the module is electrically conductively connectedto the module carrier. By way of example, the module carrier can form acommon rear contact for two or more semiconductor chips of the module,in particular for all semiconductor chips of the module. Thecounter-contacts of at least two semiconductor chips—or more extensivelythe counter-contacts of all the semiconductor chips—can likewise beelectrically conductively connected to one another, such that theoptoelectronic semiconductor chips are interconnected in parallel withone another. Alternatively, the counter-contacts of the individualsemiconductor chips can also be electrically isolated from one another,such that the semiconductor chips are drivable independently of oneanother.

The above-described semiconductor chips are particularly suitable forthe module. Features described in association with the semiconductorchips can therefore also be used for the module and vice versa.

In particular, the following technical effects can be achieved by meansof the optoelectronic semiconductor chip described and respectively theoptoelectronic module described.

The optoelectronic semiconductor chip is accessible for externalelectrical contacting from the front side of the carrier via the firstcontact and the counter-contact. The serial interconnection of suchsemiconductor chips is thereby simplified. In particular, thesemiconductor chips can be mounted with a high packing density on amodule carrier.

Furthermore, the first contact and the counter-contact can be arrangedalongside one another and laterally with respect to the semiconductorbody such that the radiation passage surface of the semiconductor chiphas a rectangular basic shape. Such an optoelectronic semiconductor chipis therefore also particularly suitable for an optoelectronic module forprojection applications.

The electrical contacting can be effected via two connecting lines, forinstance two wire bonding connections. By contrast, rear-side contactingof the semiconductor chips is not required, and so an electricallyinsulating module carrier can also be employed.

Moreover, the optoelectronic semiconductor chip is alternatively alsoelectrically contactable via the rear-side second contact and thefront-side counter-contact. The contacting of the semiconductor chip cantherefore also be effected via only exactly one front-side contact.

The semiconductor chip is therefore distinguished by a particularly highflexibility with regard to its electrical contactability and istherefore diversely usable.

BRIEF DESCRIPTION OF THE DRAWINGS

Further features, configurations and expediencies will become apparentfrom the following description of the exemplary embodiments inassociation with the figures.

In the figures:

FIGS. 1A and 1B show one exemplary embodiment of an optoelectronicsemiconductor chip in schematic sectional view (FIG. 1A) and schematicplan view (FIG. 1B); and

FIGS. 2A to 2C each show an exemplary embodiment of an optoelectronicmodule in schematic sectional view.

Elements that are identical, of identical type or act identically areprovided with identical reference signs in the figures.

The figures and the size relationships of the elements illustrated inthe figures among one another should not be regarded as to scale.Rather, individual elements and in particular layer thicknesses may beillustrated with exaggerated size in order to enable better illustrationand/or in order to afford a better understanding.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

One exemplary embodiment of an optoelectronic semiconductor chip 1 isshown in schematic sectional view in FIG. 1A.

The description is given below by way of example on the basis of asemiconductor chip provided for generating radiation, for example, aluminescence diode semiconductor chip, for instance an LED. In adeparture therefrom, however, the semiconductor chip can also beembodied as a radiation receiver, in which provision is made of anactive region for generating an electrical signal in a manner dependenton the radiation power impinging on the active region.

The semiconductor body 2 has a semiconductor layer sequence having anactive region 20. The active region is provided for generating radiationin the ultraviolet, visible or infrared spectral range. In a verticaldirection, that is to say perpendicular to a main extension plane of thesemiconductor layer sequence of the semiconductor body, thesemiconductor body 2 extends between a radiation passage surface 26 anda main surface 27. The active region 20 is arranged between a firstsemiconductor layer 21 of a first conduction type and a secondsemiconductor layer 22 of a second conduction type, which differs fromthe first conduction type. By way of example, the first semiconductorlayer is n-conducting and the second semiconductor layer isp-conducting, or vice versa. The semiconductor body, in particular theactive region, preferably contains a III-V compound semiconductormaterial.

III-V compound semiconductor materials are particularly suitable forgenerating radiation in the ultraviolet (Al_(x) In_(y) Ga_(1−x−y) N)through the visible (Al_(x) In_(y) Ga_(1−x−y) N, in particular for blueto green radiation, or Al_(x) In_(y) Ga_(1−x−y) P, in particular foryellow to red radiation) to the infrared (Al_(x) In_(y) Ga_(1−x−y) As)spectral range. It holds true here in each case that 0≦x≦1, 0≦y≦1 andx+y1, in particular where x≠1, y≠1, x≠0 and/or y≠0. With III-V compoundsemiconductor materials, in particular from the material systemsmentioned, high internal quantum efficiency can furthermore be obtainedwhen generating radiation.

The semiconductor chip 1 furthermore comprises a carrier 5, whichextends in a vertical direction between a front side 51 and a rear side52. The carrier contains, for example, a doped semiconductor material,for instance silicon or germanium. The semiconductor body 2 ismechanically stably connected to the carrier 5 by means of a connectinglayer 6, for example, an electrically conductive adhesive layer or asolder layer.

The semiconductor body 2 has a plurality of recesses 25 which extendfrom the main surface 27 through the second semiconductor layer 22 andthe active region 20 into the first semiconductor layer 21 and endthere. In the recesses 25, the first semiconductor layer is electricallyconductively connected to a first connection layer 31. The firstconnection layer 31 covers the carrier 5 over the whole area. In alateral direction, that is to say in a direction running along the mainextension plane of the semiconductor layers of the semiconductor layersequence, the first connection layer 31 projects regionally beyond thesemiconductor body 2. A first contact 41 is formed on that part of thefirst connection layer 31 which is not covered by the semiconductor body2. The first contact 41 is embodied as a bonding pad for the electricalcontacting of the semiconductor chip by means of a wire bondingconnection.

The first semiconductor layer 21 is furthermore electricallyconductively connected to a second contact 42. The second contact isformed at the rear side 52 of the carrier 5. The first contact 41 andthe second contact 42 are electrically conductively connected to oneanother via a current path extending from the front side 51 to the rearside 52. The current path runs by way of example through theelectrically conductive carrier 5. In a departure therefrom, the carrier5 can also have an electrically insulating main body, wherein electricalplated-through holes extend through the main body from the front side 51to the rear side 52 and thus electrically conductively connect the firstcontact 41 and the second contact 42 to one another.

The first contact 41 need not necessarily be a layer provided inaddition to the first connection layer 31. Alternatively, a region ofthe first connection layer 31 itself that is freely accessible forexternal electrical contacting can also form the first contact 41.

The optoelectronic semiconductor chip 1 furthermore comprises acounter-contact 45. The counter-contact 45 is electrically conductivelyconnected to the second semiconductor layer 22 via a second connectionlayer 32. In a departure from the exemplary embodiment described, thecounter-contact 45 can also be embodied as a region of the secondconnection layer 32 that is freely accessible for external electricalcontacting.

The second connection layer 32 and the first connection layer 31 overlapat least regionally in a plan view of the semiconductor chip 1. Aninsulation layer 9 is formed between the first connection layer and thesecond connection layer. The insulation layer 9 also covers the sidesurfaces of the recesses 25 and thus insulates the first connectionlayer 31 from the second semiconductor layer 22 and from the activeregion 20.

The second connection layer 32 directly adjoins the main surface 22 ofthe semiconductor body 2. The second connection layer 32 is embodied asa minor layer for the radiation generated in the active region 20.Radiation that is generated in the active region and emitted in thedirection of the carrier 5 can thus be reflected at the minor layer andsubsequently emerge through the radiation passage surface 26. For asemiconductor chip which emits radiation in the ultraviolet or bluespectral range, silver, rhodium or palladium or an alloy comprising atleast one of the materials mentioned is suitable, for example, for themirror layer. For radiation in the infrared spectral range, gold, forexample, is distinguished by a high reflectivity.

The first contact 41 and the counter-contact 45 are in each casearranged laterally with respect to the semiconductor body 2, such that ashading of the radiation passage surface 26 by aradiation-nontransmissive contact material can be avoided. In FIG. 1A,the first contact 41 and the counter-contact 45 are arranged ondifferent sides of the semiconductor body 2 in order to enable improvedillustration. Preferably, the first contact 41 and the counter-contact45 run along a side surface 29 of the semiconductor body 2 in a planview of the semiconductor chip, as shown in FIG. 1B. In this regard, asemiconductor chip in which the semiconductor body has a rectangularbase shape and is electrically contactable via two front-side contactsis realized in a simple manner.

For operation of the optoelectronic semiconductor chip 1, an externalelectrical voltage can be applied either between the counter-contact 45and the first contact 41 or between the counter-contact 45 and thesecond contact 42, such that charge carriers are injected from differentsides into the active region 20 and recombine there with emission ofradiation. The function of the semiconductor chip 1 is independent ofwhether the first contact 41 or the second contact 42 is externallyelectrically contacted. The contacting of the semiconductor chip cantherefore be effected either via a front-side contact and a rear-sidecontact or via two front-side contacts.

Via the recesses 35, charge carriers can be injected into the firstsemiconductor layer 21 uniformly in a lateral direction. In particulardepending on the transverse conductivity of the first semiconductorlayer 21, the number of recesses can be varied within wide limits. Inthe extreme case, even an individual recess can be sufficient for theelectrical contacting of the first semiconductor layer 21.

The optoelectronic semiconductor chip 1 is embodied as a thin-filmsemiconductor chip, in which a growth substrate for the semiconductorlayer sequence of the semiconductor body 2 is removed after theepitaxial deposition of said semiconductor layer sequence. Such asemiconductor chip constitutes a Lambertian surface emitter to a goodapproximation. In a departure therefrom, however, the growth substratecan also remain completely in the semiconductor chip or be removed orthinned only regionally.

A radiation conversion element 8 is arranged on the radiation passagesurface 26 of the semiconductor body 2. By way of example, radiation inthe blue spectral range that is generated in the active region 20 of thesemiconductor body can be at least partly converted into radiation inthe yellow spectral range by means of the radiation conversion element,such that the semiconductor chip 1 emits mixed radiation that appearswhite overall to the human eye. By way of example, a prefabricated platehaving a rectangular basic shape is suitable as radiation conversionelement, said plate being fixed to the semiconductor body 2. Dependingon the wavelength to be emitted, the radiation conversion element canalso be dispensed with.

FIG. 2A shows an exemplary embodiment of an optoelectronic module 10,which comprises a plurality of semiconductor chips 1 embodied asdescribed in association with FIGS. 1A and 1B. Depending on the totalradiation power to be emitted of the optoelectronic module, the numberof optoelectronic semiconductor chips 1 can be varied within widelimits.

The optoelectronic semiconductor chips 1 are arranged on an electricallyinsulating module carrier 7 and are fixed thereto. The electricalcontacting of the semiconductor chips is effected via the front-sidecontacts, that is to say, in each case via the first contact 41 and thecounter-contact 45. A first contact 41 of a first semiconductor chip lais connected to the counter-contact 45 of a second semiconductor chip 1b via a connecting line 75, for instance a wire bonding connection, suchthat said semiconductor chips are electrically interconnected in serieswith one another. By contrast, the rear-side second contact of thesemiconductor chips is not used for the electrical contacting of thesemiconductor chips.

In contrast thereto, the module carrier 7 in the exemplary embodimentsillustrated in FIGS. 2B and 2C is embodied in each case in anelectrically conductive fashion. The electrical contacting of theoptoelectronic semiconductor chips 1 is effected via the second contact42 and the counter-contact 45. By contrast, the first contact 41 is notexternally electrically contacted. In the case of a plurality ofoptoelectronic semiconductor chips, it is possible, as illustrated inFIG. 2C, to obtain an electrically parallel interconnection of thesemiconductor chips by means of an electrically conductive connectionbetween the counter-contacts 45. It goes without saying that, in adeparture therefrom, the counter-contacts 45 can also each be contactedindividually, such that the individual semiconductor chips are drivableindependently of one another.

The optoelectronic semiconductor chips described are therefore suitableboth for an optoelectronic module in which the semiconductor chips areinterconnected in series with one another and in an optoelectronicmodule or in an optoelectronic component in which rear-side contactingof the semiconductor chip is intended to be effected.

The invention is not restricted by the description on the basis of theexemplary embodiments. Rather, the invention encompasses any novelfeature and also any combination of features, which in particularincludes any combination of features in the patent claims, even if thisfeature or this combination itself is not explicitly specified in thepatent claims or the exemplary embodiments.

1-16. (canceled)
 17. An optoelectronic semiconductor chip comprising: a carrier; a semiconductor body having a semiconductor layer sequence, the semiconductor body being arranged on the carrier, wherein the semiconductor layer sequence comprises an active region arranged between a first semiconductor layer and a second semiconductor layer, the active region being provided for generating or for receiving radiation during operation; a first contact formed on a front side of the carrier facing the semiconductor body; and a second contact formed on a rear side of the carrier facing away from the semiconductor body, wherein the first semiconductor layer is electrically conductively connected to the first contact and to the second contact and wherein the first contact and the second contact are electrically conductively connected to one another.
 18. The semiconductor chip according to claim 17, wherein the carrier is electrically conductive.
 19. The semiconductor chip according to claim 17, wherein the first semiconductor layer is arranged on a side of the active region facing away from the carrier, and the first semiconductor layer is electrically connected to the first contact via a first connection layer.
 20. The semiconductor chip according to claim 19, wherein the semiconductor body has a recess that extends through the second semiconductor layer and the active region, and wherein the first connection layer is connected to the first semiconductor layer in the recess.
 21. The semiconductor chip according to claim 19, wherein the second semiconductor layer is electrically conductively connected to a counter-contact via a second connection layer.
 22. The semiconductor chip according to claim 21, wherein the first contact and the counter-contact are arranged laterally with respect to the semiconductor body in a plan view of the semiconductor chip.
 23. The semiconductor chip according to claim 21, wherein the first connection layer and the second connection layer run regionally between the semiconductor body and the carrier.
 24. The semiconductor chip according to claim 21, wherein the second connection layer runs regionally between the first connection layer and the semiconductor body.
 25. The semiconductor chip according to claim 17, wherein the semiconductor body has a rectangular basic shape in a plan view of the semiconductor chip.
 26. The semiconductor chip according to claim 17, wherein the semiconductor body is cohesively connected to the carrier.
 27. The semiconductor chip according to claim 17, wherein the first contact and the second contact are at the same electrical potential during the operation of the semiconductor chip.
 28. An optoelectronic module comprising: a module carrier; and a semiconductor chip arranged on the module carrier, the semiconductor chip comprising: a carrier; a semiconductor body having a semiconductor layer sequence, the semiconductor body being arranged on the carrier, wherein the semiconductor layer sequence comprises an active region arranged between a first semiconductor layer and a second semiconductor layer, the active region being provided for generating or for receiving radiation during operation; a first contact formed on a front side of the carrier facing the semiconductor body; and a second contact formed on a rear side of the carrier facing away from the semiconductor body, wherein the first semiconductor layer is electrically conductively connected to the first contact and to the second contact and wherein the first contact and the second contact are electrically conductively connected to one another.
 29. The optoelectronic module according to claim 28, further comprising a second semiconductor chip, wherein the semiconductor chip and the second semiconductor chip are electrically interconnected in a series with one another.
 30. The optoelectronic module according to claim 29, wherein the first contact of the semiconductor chip and a counter-contact of the second semiconductor chip are electrically connected to one another via a connecting line.
 31. The optoelectronic module according to claim 28, wherein the module carrier comprises an electrically insulating material.
 32. The optoelectronic module according to claim 28, wherein the module carrier is electrically conductive and the second contact of the semiconductor chip is electrically conductively connected to the module carrier.
 33. An optoelectronic semiconductor chip comprising: a carrier; and a semiconductor body having a semiconductor layer sequence, the semiconductor body being arranged on the carrier; wherein the semiconductor layer sequence comprises an active region, which is arranged between a first semiconductor layer and a second semiconductor layer and is provided for generating or for receiving radiation during operation; wherein the first semiconductor layer is electrically conductively connected to a first contact and to a second contact; wherein the first contact is formed on a front side of the carrier facing the semiconductor body; wherein the second contact is formed on a rear side of the carrier facing away from the semiconductor body; wherein the first contact and the second contact are electrically conductively connected to one another; and wherein a function of the semiconductor chip during operation is independent of whether the first contact or the second contact is externally electrically contacted. 